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sio2 is used as insulation layer in mosfet

sio2 is used as insulation layer in mosfet

sio2 is used as insulation layer in mosfet

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Why silicon oxide is used in MOSFET?

Silicon di oxide is used as an insulation layer between the gate and the conducting channel of the MOSFET.

Reason we use ‘SiO2′ is that it provides a better isolation and is a good dielectric material, and also we just need to do oxidation on the already grown ‘Si’ layer to achieve isolation.

Purpose of isolation is to avoid flow of charge directly from gate to the conducting layer of MOSFET.

Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor)
from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 – 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel.

Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungsten, a silicide (TiSi, MoSi2, TaSi or WSi2) or a sandwich of these layers. This gate electrode is often called “gate metal” or “gate conductor”. The geometrical width of the gate conductor electrode (the direction transverse to current flow) is called the physical gate width. The physical gate width may be slightly different from the electrical channel width used to model the transistor as fringing electric fields can exert an influence on conductors that are not immediately below the gate.

The electrical properties of the gate oxide are critical to the formation of the conductive channel region below the gate. In NMOS-type devices, the zone beneath the gate oxide is a thin n-type inversion layer on the surface of the p-type semiconductor substrate. It is induced by the oxide electric field from the applied gate voltage VG. This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the drain.

Overstressing the gate oxide layer, a common failure mode of MOS devices, may lead to gate rupture or to stress induced leakage current.


The first MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was invented by Egyptian engineer Mohamed Atalla and Korean engineer Dawon Kahng at Bell Labs in 1959. In 1960, Atalla and Kahng fabricated the first MOSFET with a gate oxide thickness of 100 nm, along with a gate length of 20µm. In 1987, Bijan Davari led an IBM research team that demonstrated the first MOSFET with a 10 nm gate oxide thickness, using tungsten-gate technology.

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Microwave cables



  • Silicone Dioxide Dielectric
  • 50 ohm nominal impedance
  • Hermetically sealed cable assembly
  • Cable can withstand temperatures exceed 900°C
  • Connectors can be made to withstand temperature exposures in excess of 600°C
  • Excellent Phase stability over temperature (does not exhibit PTFE “knee”)
  • Semi-rigid (can be hand formed)
  • Can be bent per customer’s requirements
  • Cables can be phase matched

Measure Tech Advantage

The Measure Tech SiO2 cables and hermetically sealed connectors are designed and manufactured in house with very little outsourcing. As a result, Measure Tech can offer lead times that cannot be matched and some cable configurations that can be produced rapidly.

In addition, our qualified engineering team is available to help solve your program’s challenges.

Cable Design

For over 20 years Measure Tech has provided SiO2 semi ridged microwave cable assemblies for use in high temperature applications where no other microwave cable would not survive.

Formulating the high purity (99.98+%) fumed silicon dioxide dielectric years of research and experimentation. The result is a process where α-quartz is converted to β-quartz which provides a lower density and dielectric constant to Teflon wrapped PTFE coaxial microwave cables.

The advantage SiO2 cable has over standard cable is a temperature rating from -270°C to 1,000°C while maintaining the most exceptional properties of low loss and phase stability.

Current cable offers include diameters of 0.090”, 0.125”, 0.142”, and 0.200” with customer configurations available.

Connector Design

Hermetically sealed connectors are designed and manufactured at Measure Tech using specially formulated crack free glass. Polycrystalline glass ceramic, developed by Measure Tech combined with super alloys allow the connectors the ability to operate to 600°C and above. 100% of connectors are Helium leak tested to 1×10^8cc/sec prior to cable assembly. Connectors are manufactured per military specifications such as SMA, N, and TNC. Custom connectors can be designed to meet customer’s requirements.


Cable and Connector Integration

Cables are cut to length in accordance with customer requirements. Both ends are prepped and the cables are pressurized (backfilled) with 100% Helium prior to the installation of connectors. The assembly is electrically tested for electrical performance and then welding is performed in house using automated welding machines to ensure repeatability.

All welds are qualified which includes cross-sectioning samples and measuring weld penetration.

Each cable when complete is tested to assure the final product leak rate does not exceed 1×10^8cc/sec of Helium. As a final inspection process, electrical testing is performed on 100% of cable assemblies and data is provided to the customer.

Micro Mechanical Systems

Michael L. Reed, Gary K. Fedder, in Handbook of Sensors and Actuators, 1998

2.2.3 SiO2

Silicon dioxide, SiO2, is an amorphous material used in microsystems as a dielectric in capacitors and transistors; as an insulator to isolate various electronic elements; and as a structural or sacrificial layer in many micromachining processes. Thin films of oxide are easily grown or deposited on silicon wafers using a variety of techniques that are reviewed in Section 2.3. High-quality oxide films provide excellent electrical insulation with resistivity values as high as 1010 Ω-m. Oxide films are also good thermal insulators, with a low thermal conductivity of around 1.4 W/m-K. Phosphorous-doped and boron-doped oxides, known as phosphosilicate glass (PSG) and borosilicate glass (BSG), respectively, will flow at temperatures above approximately 900°C. Reflow of PSG and BSG films is commonly employed for planarization purposes. Heavily doped PSG films are used as sacrificial material in many surface-micromachining processes because of the rapid etch rate in hydrofluoric acid.

The residual stress in oxide films, as grown or deposited on a substrate, is always compressive (on the order of 1 GPa).
Therefore, micromechanical structures made from oxide are constrained in design and size to avoid mechanical buckling upon release from the substrate.

One of the crystalline forms of SiO2 quartz, is useful as a microsystem substrate.
Quartz sensors are generally bulk micromachined devices, and exploit the piezoelectric properties to convert mechanical displacement into electrical signals.
Various ultrasonic transducers make use of quartz.
Quartz has extremely low structural damping, making it an ideal material for mechanically resonant structures, such as low-noise oscillators.

Borosilicate glass substrates are used in many bulk micromachined processes.
Specifically, electrostatic (or anodic) bonding of silicon to glass is almost always accomplished with Coming #7740 glass
because of its close match of thermal coefficient of expansion to that of silicon.
Channels, depressions, and holes in glass substrates can be etched chemically or machined conventionally.

Including Actinides

M. Sato, … G. Adachi, in Handbook on the Physics and Chemistry of Rare Earths, 2016

5.1.4 Other Synthesis Methods

A novel raw material was proposed recently.
Silicon monoxide (SiO) was used for the synthesis of silicate phosphors as a substitute for silicon dioxide (SiO2) (Ishigaki et al., 2011; Toda, 2012).
When a mixture of raw materials of silicate phosphor-containing SiO is heated at 1400–1600°C, SiO sublimates and reacts to give other raw materials more easily in the gas phase.
As a result, phosphor synthesis is better promoted and an end-product with better crystallinity is obtained.

Another novel attempt to synthesize phosphors is a rapid heating process using arc imaging furnace (Ishigaki et al., 2010).
In this process, a mixture of raw materials is heated up in the furnace at around 2000°C (or more) to be a molten state within around 10 s.
After a while, it is quenched and solidified by stopping heating. The cooling rate was estimated as more than 100°C/s.
The process is advantageous especially in research activities because of short synthesis time.
The synthesis of YAG:Ce3 + phosphor with a lens shape by this process was reported (Toda, 2012).
The obtained phosphor sample was claimed to be useful for LED color conversion as is, that is without subsequent grinding.

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